SemiSouth Laboratories, Inc., has launched the SJDP120R340, a normally on SiC trench JFET that, when compared with silicon MOSFETs, enables higher switching speeds and substantially lower losses.
Rated at 1200 V with a maximum on-state resistance of 340 mO (typical RDSon of 270 mO), these new devices feature a positive temperature coefficient for ease of paralleling and fast switching with no tail current at 150įC. Key applications include photovoltaic microinverters, SMPS and UPS, motor drives, and induction heating.
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This article originally appeared on EE Times Europe.