SemiSouth Laboratories has unveiled a demo board showing the operation of its SiC JFETs in a cascode half-bridge configuration. Enabling a quick evaluation of the SJDP120R085 JFET, the demo board platform is suitable for many applications including boost, buck, inverter and PSU half-bridge power stage designs.
In the cascode configuration, the JFET is driven via a source-connected MOSFET, allowing existing, commercially available MOSFET drivers to be used.
Normally-on SJDP120R085 1200 V power JFETs enable high-speed switching, are compatible with standard gate drive circuitry, and feature a positive temperature coefficient for ease of paralleling. The JFETs have a high saturation current (27 A), low on-resistance per unit area (85 mO max), and improved switching performance.
The demo board comes complete with Gerber files and a BOM to allow users to build their own circuits.
Visit SemiSouth Laboratories at http://www.semisouth.com.
This article originally appeared on EE Times Europe.