Renesas Electronics Corp. is starting to sample eight new low-loss P- and N-channel power MOSFET products optimized for use in portable electronics, including smartphones and tablets.
Featuring low loss (low on-resistance), the new devices include the 20 V (VDSS) µPA2600 and the 30 V µPA2601, equipped in ultra-compact 2 mm × 2 mm packages to deliver increased power efficiency and miniaturization within smaller mobile device form factors.
Renesas achieved the use of 2 mm × 2 mm ultra compact packages by placing large-area high-performance chips in miniature packages and using an exposed heat sinkminiature package, thus efficiently dissipating the package heat to the mounting board. The µPA2600 and similar products can reduce the mounting area by approximately 30 percent compared to existing 3 mm × 2 mm packages, and the µPA2672 and similar products can reduce the mounting area by approximately 40 percent compared to existing 3 mm × 3 mm packages. This can reduce the size and weight of end-use products.
The µPA2600 and µPA2601 MOSFETs achieve an on-resistance of 9.3 mO (typical value at VGSS=4.5 V) for the 20 V (VDSS) µPA2600 device and 10.5 mO (typical value at VGSS=10 V) for the 30 V µPA2601 device, enabling power savings in end-use products.
Comprising eight devices, the new P- and N-channel power MOSFETs are concentrated in the 12- to 30 V range common in portable devices: 4 P-channel products, including the µPA2630, 3 n-channel products including the µPA2600, and the µPA2690, which holds both an N-channel and a P-channel device in a single package. Thus, this lineup can support a variety of applications, including charge/discharge control, RF power amplifier on/off control, and overcurrent cutoff switches.
Pricing: 40 cents each.
Availability: Samples will be available April 2012. Mass production is scheduled to begin in May 2012 and is expected to reach a combined volume of 3,000,000 units per month for all eight products by 1H of FY2013. Specifications: Click here.