FEI has launched the Verios XHR (extreme high resolution) SEM (scanning electron microscope), which provides subnanometer resolution and enhanced contrast for precise measurements on beam-sensitive materials in advanced semiconductor manufacturing and materials science applications. At low kV, where the performance of conventional SEMs degrades significantly, the Verios systemís advanced optics extends SEM capability to the 22-nm node and below.
Verios XHR allows users to quickly switch between various operating conditions, maintain sample cleanliness, and obtain subnanometer resolution at any accelerating voltage from 1 kV to 30 kV. The system also introduces new detection technologies. Optimized signal collection and filtering abilities not only provide higher and more flexible contrast generation, but also allow for a greater range of samples to be investigated. FEI reports that many beam-sensitive and nonconductive materials can be accurately observed at the nanoscale, without any preparation.
Accurate navigation is achieved with a five-axis, 100◊100-mm piezoceramic stage complemented by multiple navigation packages, including fast bit-cell counting. A large analytical chamber and high-current mode enable samples up to 200 mm in diameter to be accommodated, cleaned, navigated, imaged, and analyzed with minimal preparation.
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