A family of DDR3L-RS SDRAMs aims to improve system power use in standby in ultra-thin computers. Manufactured using a 30-nm class process technology, the 1.35-V, 2-Gb and 4-Gb devices from Micron reduce self-refresh power (IDD6).
"DDR3L-RS is an excellent option for customers who have tight power budgets and need high performance at a competitive price, says Mike Howard, senior principal analyst, DRAM and memory at IHS iSuppli, in a statement. We expect many of the next-generation ultrathin platforms to take advantage of DDR3L-RS."
Intel already has validated the products for its Ivy Bridge platform. In addition to the volume production of the 2-Gb and 4-Gb memories, Micron is sampling the DDR3L-RS in 8 Gb x 16 and x 32 for reduced board space and increase density. The company plans to launch DDR4-RS early next year.
For more information on the product family, click here.
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