A new FRAM-based device offers radiation tolerance and low-power operation. Targeting high-frequency RFID applications, the MB89R112 from Fujitsu Semiconductor America is the latest member of the company's FerVID Family, which uses FRAM memory for fast write speeds and high-frequency rewriting capabilities. The device integrates 9 KB of FRAM with a full 8 KB available as user memory. Memory is structured as 256 blocks of 32 B per block, permitting read and write access to the entire 8 KB region defined in ISO/IEC15693. Writing 8 KB of data takes about four seconds.
The MB89R112 operates at 13.5MHz ±7kHz and assures data retention for up to 10 years. Aside from the wireless HF interface, the dual-interface MB89R112 offers a wired SPI for MCU connectivity.
The combined features of the MB89R112 are expected to create new options for RFID use in embedded and industrial designs—for example, facilitating wireless modification of product operating parameters, logging environmental readings for logistics, detecting equipment errors, modifying electronic displays, altering sensor threshold values, and changing firmware settings. Capabilities like these can enhance production control in automotive and electronics manufacturing. They can also help with maintenance applications in aviation, road building, construction and civil engineering.
The MB89F112 is now available in sample quantities. For more information, click here.
A version of this article originally appeared on the EE Times India website.