Europe (TEE) has unveiled a sixth generation IGBT technology that
offers improved switching loss/conduction loss trade-off for increased
efficiency and improved performance.
The new technology is the basis for a new family of compact
600 V devices that will suit a variety of hard switching applications
including motor drives, solar inverters and uninterruptible power supplies (UPS).
Toshiba’s sixth generation IGBT technology combines a finer pattern
design and a thinner ‘punch through’ wafer process than the previous
generation, as well
as a highly optimised vertical design. As a result, devices based
around the new process are able to provide lower VCE(sat) conduction
losses and reduced Eon and Eoff switching losses.
New products featuring the sixth generation technology offer current
ratings of 15 A (GT15J341), 20 A (GT20J341), 30 A (GT30J341) and 50 A
(GT50J342). Each of the parts integrates both the IGBT and a fast
reverse recovery diode connected between emitter and collector, in a
single, compact package. All feature a typical VCE(sat) of 1.5 V at the
nominal current. The 15 A and 20 A parts are supplied in a isolated
TO-220SIS package, while the 30 A and 50 A devices are available in an
non-isolated TO-3P(N) (TO-247 equivalent) package.
The efficiency and performance improvements offered by the new devices
can be seen for example by comparing the GT50J342 50 A device and the
GT30J341 30 A device with their predecessors. At TC=150°C with a current
of 50 A the GT50J342 provides a reduction in VCE(sat) of 32% and
respective reductions in Eon and Eoff of 13% and 26%. This reduces
overall losses by 24% (DC bus voltage 300 V and IGBT switching frequency
of 20 KHz). At TC=150°C with a current of 30 A the GT30J341 provides a
reduction in VCE(sat) of 30% and respective reductions in Eon and Eoff
of 12% and 33%. This reduces overall losses by 26% (DC bus voltage 300 V
and IGBT switching frequency of 20KHz).
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