RF Micro Devices has announced a front end RF, the single-chip
RFFM6403, designed to reduce customer design time and speed customer
time-to-market in smart energy metering applications operating in the
405 to 475MHz frequency range, as well as for portable battery powered
equipment and general 433/470MHz ISM band systems.
The RFFM6403 integrates a transmit high power path
with a +30.5dBm PA and Tx harmonic output filtering, a transmit bypass
through path with Tx harmonic output filtering, and a receive path with a
low noise amplifier (LNA) with bypass mode. The FEM also features a low
insertion loss/high isolation SP3T switch and separate Rx/Tx 50O ports,
simplifying matching and providing input and output signals for both
the Tx and Rx paths.
The RFFM6403 is designed for systems operating with high efficiency
requirements and a minimum output power of 30 dBm. In the receive path,
the Rx chain provides 16 dB of typical gain with only 5 mA of current
and an excellent noise figure of 1.7 dB. The 6x6x1mm chip minimizes
product footprint at the customer device while reducing external
component count and associated assembly costs.
Visit RF Micro Devices at www.rfmd.com
This article originally appeared on EE Times Europe.