A new LPDDR3 memory architecture, which includes a controller and DRAM interface, supports data rates between 1600 Mb/s and 3200 Mb/s. Aimed at the mobile industry, the Rambus Inc. R+ LPDDR3 can reduce active memory system power consumption by up to 25% and active DRAM power demand by up to 30%. The performance is driven by a low-swing implementation of the Rambus near-ground signaling technology. Essentially, this single-ended, ground-terminated signaling technology allows devices to achieve higher data rates with significantly reduced I/O power to improve functionality for streaming HD video, gaming, and data-intensive apps on mobile devices, says Rambus.
The R+ LPDDR3 architecture is built from ground up to be backward compatible with LPDDR3 supporting same protocol, power states, and existing package definitions and system environments. The product was designed using the Globalfoundries 28-nm SLP process technology.
Additional features include:
- Multi-modal support for LPDDR2, LPDDR3, and R+ LPDDR3
- DFI 3.1 and JEDEC LPDDR3 standards compliant
- Supports package-on-package and discrete packaging types
- LabStation software environment for bring-up, characterization, and validation in end-user application
For more information, see www.rambus.com/LPDDR3