Toshiba has developed a new generation of its high speed flash
memory to provide zero-wait state performance at 100MHz for its
ARM-based embedded microcontrollers.
Nano Flash-100 follows on from the original NANO FLASH which
merges high speed programming based on NAND flash memory cell device
technology with NOR flash memory circuit technology. The Nano Flash-100
allows that 100MHz performance and the higher densities required to
match the performance of ARM-based microcontrollers.
Toshiba will follow up on its first NANO FLASH-100 product, TMPM440F10XBG, with additional ARM core-based products and will continue the proactive development of flash memory technologies for embedded microcontrollers.
This article originally appeared on EE Times Europe.