A portfolio of SPI flash memory includes three new devices offering 2, 4, and 8 Mb of memory. The SST25PF020B, SST25PF040B and SST25PF080B products from Microchip Technology Inc. feature an operating voltage range from 2.3 V to 3.6 V. The memory is partitioned into uniform 4-Kb sectors and 32- and 64-Kb blocks. The extended voltage range and low overall power consumption make the devices a good fit for battery-operated accessories, sensors and equipment.
The devices erase sectors and blocks as fast as 18 ms, clearing the entire flash memory chip in 35 ms. They also boast a word-programming time of 7 Ķs using Auto Address Increment (AAI). The active read current measures 10 mA, typical, at 80 MHz, and standby current is 10 ĶA, typical. Additionally, the products withstand 100,000 endurance cycles, typical, and offer more than 100 years of data retention.
Manufactured using Microchipís SuperFlash technology, the product family features split-gate cell design and thick-oxide tunneling injector. The SST25PF020B starts at $0.53 each in eight-lead 150 mil SOIC, eight-contact USON (3 x 2 mm) or eight-contact WSON (6 x 5 mm) packages. The SST25PF040B starts at $0.66 each in eight-lead 150 mil SOIC, eight-lead 200 mil SOIC or eight-contact WSON (6 x 5 mm) packages. The SST25PF080B starts at $0.81 each in eight-lead 150 mil SOIC, eight-lead 200 mil SOIC or eight-contact WSON (6 x 5 mm) packages. All three devices come in 10,000-unit quantities.
For additional information, visit www.microchip.com/get/4GJ2.