Efficient Power Conversion Corp. (EPC) has
introduced the EPC9010 development board to make it easier for engineers
to start designing with a 100V enhancement-mode gallium nitride (eGaN) field effect transistor (FET).
The development board will support applications such as high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.
The EPC9010 development board is a 100 V maximum device voltage, 7 A
maximum output current, half bridge with onboard gate drives, featuring
the EPC2016 enhancement mode (eGaN) field effect transistor (FET). The
purpose of this development board is to simplify the evaluation process
of eGaN FETs by including all the critical components on a single board
that can be easily connected into any existing converter.
The EPC9010 development board is 2 x 1.5 inch and contains two EPC2016
eGaN FET in a half bridge configuration using the LM5113 gate driver
from Texas Instruments as well as supply and bypass capacitors. The
board contains all critical components and layout for optimal switching
performance. There are also various probe points to facilitate simple
waveform measurement and efficiency calculation.
David Patterson, known for his pioneering research that led to RAID, clusters and more, is part of a team at UC Berkeley that recently made its RISC-V processor architecture an open source hardware offering. We talk with Patterson and one of his colleagues behind the effort about the opportunities they see, what new kinds of designs they hope to enable and what it means for today’s commercial processor giants such as Intel, ARM and Imagination Technologies.