A pair of new FRAM products featuring an SPI serial interface guarantees 1013 read/write cycles. Geared toward applications such as industrial machinery and medical devices, the 1-Mb and 2-Mb FRAM offerings from Fujitsu Semiconductor consume 92% less power during writing compared to identical-density EEPROM. The MB85RS1MT and MB85RS2MT incorporate all the technology required for system memory components into a single chip, lowering power consumption. Additionally, the memory itself fits into a smaller package size, reducing the mounted area required for memory components by more than 90%.
The 10-trillion read/write cycle count marks a 10-fold improvement over Fujitsuís existing FRAM. The upgrade minimizes the risk of data loss from sudden voltage drops or power outages. Offering 10 years of data retention, the devices are nonvolatile, eliminating the cost and space required for a backup battery. Operating power supply voltage for both versions runs from 1.8 V to 3.6 V.
The new products will be available in sample quantities starting in late March. Visit Fujitsu to view the data sheets.
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