Vishay Intertechnology Inc. has broadened its optoelectronics portfolio with the introduction of two high-speed 850 nm and 940 nm infrared emitters and a package-matched high-speed silicon PIN photodiode with high radiant sensitivity from 780 nm to 1050 nm.
The VSMG10850, VSMB10940, and VEMD10940F offer an ultra-wide ± 75° angle of half intensity in a compact side-view surface-mount package measuring 3 mm by 2 mm and a height of only 1 mm.
Offered in clear, untinted plastic packages, the IR emitters provide high radiant intensity of 1 mW/sr typical at 20 mA, up to 33% higher than comparable devices on the market, and fast switching times of 15 ns, according to Vishay. The 940 nm VSMB10940 features GaAIAs multi quantum well technology and a low forward voltage of 1.3 V typical while the 850 nm VSMG10850 offers GaAIAs double hetero technology and a forward voltage of 1.4 V.
The VEMD10940F photodiode features a daylight blocking filter matched with 830 nm to 950 nm IR emitters, including the VSMG10850 and VSMB10940. The device offers a reverse light current of 3 µA, low dark current of 1 nA, 920 nm wavelength of peak sensitivity, and a low 0.1 %/K temperature coefficient of light current.
The devices are optimized for use in IR touch panels for devices such as printer displays, eBook readers, smartphones, tablets, ultrabooks, and GPS units. The devices provide a floor life of 168 hours and moisture sensitivity level (MSL) of 3 in accordance with J-STD-020. The emitters and photodiode support lead (Pb)-free reflow soldering and conform to Vishay's "Green" standards.
Pricing: For U.S. delivery in 5,000-piece quantities starts at $0.06 per piece for the VSMB10940, $0.08 per piece for the VSMG10850, and $0.06 per piece for the VEMD10940F.
Availability: Samples and production quantities of the new IR emitters and photodiode are available now, with lead times of six to eight weeks.
Datasheets: VSMG10850, VSMB10940, and VEMD10940F