Last week I spoke with the team at Cypress about their new SRAMs for military, aerospace, and defense applications. What impresses about this design is its high density, footprint, and radiation absorbing abilities, as well as having DDR interfaces on both the read and write ports. In addition, the new SRAMs use an FPGA based design, so it is possible to use the same platform in multiple missions
The new radiation-hardened 72-MBit QDR II+ SRAMs use the company's RadStopô technology, which enables functionality in the face of measured radiation doses of up to 350 kRads. The series includes four devices with clock speeds up to 250 MHz and throughput up to 36 gigabits per second (Gbps), all housed in 21x25mm 165-pin ceramic column grid array (CCGA) packages. For US defense system designers, a key point of note is the SRAM is manufactured in Minnesota, and is packaged and tested in the US.
- Single event latch-up and single event functional interrupt immunity at temperatures as high as 125 degrees Centigrade.
- Seperate, independent read and write ports
- DDR interfaces on both read and write ports (data tranfer at 500MHz with 250MHz clock input)
- X16 and X36 I/O configurations
- Single mulitplexed address bus for both reads and writes
- 2 cycles read latency
- 2 and 4 word burst mode
The four new devices are numbered as follows:
- CYRS1542AV18-250GCMB (x18, burst of 2)
- CYRS1543AV18-250GCMB (x18, burst of 4)
- CYRS1544AV18-250GCMB (x36 burst of 2)
- CYRS1545AV18-250GCMB (x36, burst of 4)
Samples are available now. Full production and QML-V qualification is expected in Q2 2011.
In terms of the roadmap, the Cypress Aerospace and Defense group expects to follow with 4Mb fast asynchronous and 16Mb fast asynchronous versions in the second part of 2011, which will use same rad-stop technology.