The 3STR1630 NPN transistor from STMicroelectronics is the first member in a new family of high-performance bipolar power transistors manufactured using a new low-voltage planar technology. This technology incorporates a double-metal process that allows the cell density to be almost doubled without requiring the use of sophisticated photolithography equipment.
In addition to increasing the current capability by about 50 percent for the same die size, the double-metal process enables transistors with Vceo ratings up to 100V, higher working switching frequencies (up to 300kHz), and a 40 percent reduction in Vce(sat). The new transistors offer a combination of high current capability, collector-emitter blocking voltage, and ultra-low collector-emitter saturation voltage, making them well-suited for use in LED drives, motor and relay drives, and DC-DC converters.
The 3STR1630 has a minimum BVCEO of 30V, offering the best compromise between a 28V blocking voltage capability and minimum Vce(sat), with an equivalent on-resistance of only 100 milliOhms at hFE figure of 50. In addition, it can handle a continuous current as high as 6A while being housed in a small outline SOT-23 package.
The 3STR1630 is now in full production and is available at $0.24 in quantities of 1000.
For more information visit www.st.com
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