Freescale Semiconductor has introduced two LDMOS RF power transistors that allow wireless base station amplifiers to cover all channels in an entire allocated frequency band.
Freescale’s MRF8P20165WH/S for the 1930 to 1995 MHz PCS band and the MRF8P20140WH/S for the 1880 to 2025 MHz TD-SCDMA bands F & A, can support the corresponding wireless spectrum with one amplifier. This significantly reduces the number of power amplifiers needed for a multi-band base station and enables network operators to consolidate devices and equipment, resulting in lower operating expenditures.
MRF8P20165WH/S (1930 to 1995 MHz)
- 37 W average power with input signal peak-to-average ratio (PAR) of 9.9 dB
- 47.7% drain efficiency
- 16.3 dB typical power gain
MRF8P20140WH/S (1880 to 2025 MHz)
- 24 W average power with input signal PAR of 9.9 dB
- 43.7% drain efficiency
- 16 dB typical power gain
Both devices are designed for use in Doherty amplifier configurations and digital pre-distortion. They handle a 10:1 VSWR impedance mismatch when operating at 32V and driven with twice their recommended input power. The transistors are internally matched with low capacitance and have integrated electrostatic discharge (ESD) protection. Their broad gate-source voltage range of -6 to +10V increases their performance when operated in Class C mode. The transistors are housed in Freescale’s NI-780-4 and NI-780S-4 air cavity packages.
The MRF8P20165WH/S and MRF8P20140WH/S are available in sample quantities, and full production is expected in May 2011. A reference design and other support tools are available to designers.
MRF8P20165WH/S Data sheet
MRF8P20140WH/S Data Sheet