At IMS 2011, NXP Semiconductors N.V. released its new XR family of “eXtremely Rugged” LDMOS RF power transistors. Target applications include industrial lasers, metal etching, and concrete drilling. Based on NXP’s LDMOS technology, the XR family extends LDMOS into the few remaining domains that are serviced by VDMOS and bipolar transistors today. NXP showcased its first XR RF power transistor, the BLF578XR at the IEEE MTT-S International Microwave Symposium 2011 (IMS2011) in Baltimore, Maryland (booth #420).
NXP is so confident in the ruggedness of its new transistors, it filmed some testing for you to judge:
Sudden and severe load disturbances are commonplace in certain RF power applications. NXP expects its new RF power transistor ito survive them all, without failure or degradation, through years of active life. These load disturbances are replicated in the lab by inducing mismatches at the load side, with the severity of the mismatch recorded as a voltage standing wave ratio (VSWR). While most base-station and broadcast applications require “rugged” RF power transistors to survive a VSWR of 10:1 through all phases, the “eXtremely Rugged” BLF578XR easily survives repeated VSWR tests of 125:1 – the highest level measured by the test unit. This is particularly critical for certain ISM applications that require the RF power transistor to survive a VSWR test that can exceed 100:1.
In most applications, the BLF578XR will be a simple plug-in replacement for the BLF578.
Frequency range: 0 to 500 MHz
Gain: 24 dB at 225 MHz
Efficiency: 70 % at 225 MHz
VSWR: 125:1 at 1200 W through all phases
Peak output power: 1400 W (pulsed)
Thermally enhanced: 0.14 K/W
NXP BLF578XR samples are available now, with volume shipping to begin in Q3 2011.
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