At IMS2011, Toshiba America Electronic Components, Inc. announced the TGI1314-25L, a gallium nitride (GaN) semiconductor high electron mobility transistor (HEMT), the latest addition to its power amplifier (PA) product family. Optimized for Ku-band satellite communication applications, the TGI1314-25L operates in the 13.75GHz(1) to 14.5GHz range with output power of 25W. The device features output power of +44.0dBm (typ.) with +39dBm input power, linear gain of 8.0dB (typ.) and drain current of 2.5 Amps (typ.). The new product is targeted to satcom applications including very small aperture terminals (VSAT).
13.75 – 14.5GHz
Typ. output power: 44.0dBm @ Pin=39.0dBm
Typ. linear gain: 8.0dB
Min. 3rd order intermodulation: -25dBc @ Po=37.0dBm S.C.L.
Drain current: +24V/2.5A
Samples of the TGI1314-25L will be available in the third quarter 2011, with mass production scheduled for the fourth quarter 2011. For availability of samples, please contact a Toshiba representative.
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