Hittite Microwave Corporation has introduced the HMC999 GaN HEMT MMIC power amplifier (PA) which is ideal for test and measurement equipment and military EW and ECM applications up to 10 GHz.
- 0.01 and 10 GHz
- 11 dB of gain
- +38 dBm of output power at 1 dB gain compression
- +47 dBm output third-order intercept (IP3) at midband
For less demanding applications, the HMC999 can be operated from a drain voltage as low as +28V while still producing 5 Watts of saturated output power. When biased for maximum output power, the HMC999 consumes 1100 mA of quiescent current from a +48V supply, and achieves approximately 18% power added efficiency at saturation.
The new PA delivers 10 Watts of saturated output power in a chip area of only 7 mm2, equating to a power density of 1.5 W/mm2 across 3 decades of bandwidth. Availability
Samples are available from stock and can be ordered via the company's e-commerce site or via direct purchase order.More InformationDatasheet