Airfast transistors boost efficiency, peak power and signal bandwidth of next-generation small-cell and large-cell base stations.
The transistor portfolio now includes:
AFT09PW200N—the first Airfast 900 MHz 28V LDMOS product.
AFT18HW23OS—28V transistor for symmetric or asymmetric Doherty applications, delivering 46% efficiency at 8dB OBO and 17dB of gain.
AFT 21S230S—28V device housed in NI780—2 packaging for VBW up to 100MHz, designed for use in symmetric or asymmetric Doherty applications. In symmetric deployment it can delver 45% efficiency at 8dB OBO and 16dB of gain.
AFT18HW350—operates at 1805-1880MHz or 1930-1995MHz uses enhanced video bandwidth technology to enable full-band, multi-carrier operation.
MMD25254H Advanced Doherty Alignment Module (ADAM)—GaAs MMIC enables optimization of Doherty amplifiers, allows phase and peaking adjustments, and provides power efficiency, output power and linearity across entire frequency band.
For more information visit Freescale Semiconductor