The AFG25HW355S is a 350W, high-performance-in-package (HiP), 2:1 asymmetric RF power amplifier built with gallium nitride (GaN) technology.
The device features:
- 2.3 GHz-2.7 GHZ
- 56 dBm peak power
- 50 Percent efficiency
- 16 dB gain
- NI-780 packaging
GaN technology provides smaller form factors, low parasitic loss, elevated power density, and higher frequency operation in such GaN cellular applications as quasi-linear, high efficiency, high-powered pulsed (non-linear) applications, broadband Pas, and switch-mode amplifier configurations. Contact company for samples and pricing).
For more information visit Freescale Semiconductor