Cree has introduced an all-SiC Cree power module rated at 100A current handling and 1200V blocking voltage.
The module includes SiC MOSFETs and SiC Schottky diodes in a 50mm half-bridge configuration rated to 150°C maximum junction temperature. The SiC components enable the module to be operated at exceptionally high switching frequencies that can reduce the size, weight and cost of the power conversion system.
The new power module has demonstrated up to 100 kHz switching frequency. Target applications include high power converters, industrial motor drives, solar inverters and uninterruptible power supplies.
For further information about the new all-SiC Cree power module click here.
Visitors to Electronica 2012 Conference, November 13 – 16, can learn more about the new dual module at Hall A5, Booth 343.