Design Con 2015
Breaking News
SuVolta Power-Saving Chip Process Enters Production
9/4/2013

The DDC transistor relies on tight control of dopant concentration and depletion depth. The no-, low-, and high-dopant concentrations are achieved through multiple growth phases of epitaxial silicon prior to device fabrication. (Source: SuVolta)
The DDC transistor relies on tight control of dopant concentration and depletion depth. The no-, low-, and high-dopant concentrations are achieved through multiple growth phases of epitaxial silicon prior to device fabrication.
(Source: SuVolta)

Return to Article

Radio
NEXT UPCOMING BROADCAST
EE Times Senior Technical Editor Martin Rowe will interview EMC engineer Kenneth Wyatt.
Top Comments of the Week
Like Us on Facebook

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
EE Times on Twitter
EE Times Twitter Feed
Flash Poll