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The DDC transistor relies on tight control of dopant concentration and depletion depth. The no-, low-, and high-dopant concentrations are achieved through multiple growth phases of epitaxial silicon prior to device fabrication. (Source: SuVolta)
The DDC transistor relies on tight control of dopant concentration and depletion depth. The no-, low-, and high-dopant concentrations are achieved through multiple growth phases of epitaxial silicon prior to device fabrication.
(Source: SuVolta)

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