Flash-based storage specialist SanDisk Corp. has announced that it has optimized its 19nm iNAND flash memory for use in tablet computers based on Intel's Bay Trail 22nm Atom processor.
The optimizations make iNAND Extreme operate faster and more responsively with the processor, and the memory is being supplied as samples to makers of Android and Windows 8 tablet computers, SanDisk said in a press release.
SanDisk's iNAND products come in a variety of storage capacities, ranging from 4 to 128 Gbytes and in iNAND, iNAND Ultra, and iNAND Extreme versions that meet the eMMC interface specification. Typically an eMMC memory consists of three dies -- the multimedia card interface, the NAND flash memory, and the flash memory controller IC -- in a ball-grid array package. However, the largest capacity monolithic NAND flash IC currently available is 128 Gbit, so it would require multiple NAND flash dies to get to 128 Gbyte capacity
SanDisk's iNAND components are available in embedded flash drive and multi-chip package forms. SanDisk claims that its iNAND Extreme component improves synchronization speeds and thereby the operating system responsiveness. iNAND Extreme offers sequential read/write speeds of up to 150 Mbytes per second.
SanDisk is focused on developing application-specific memory products and is partnered with Toshiba for the production of memory die. The two companies are co-investors in the manufacturing joint venture, Flash Forward Ltd. in Japan.