Meanwhile, Samsung is working with what it calls a "10-nm-class" triple-level-cell NAND flash chip. This is just another way of saying 1x nm NAND flash; in this case, TechInsights lists the Samsung chip as being fabricated using a 16-nm process. Samsung is shipping 128-Gb chips for use in solid-state drives aimed at the enterprise storage market. By leveraging its 20-nm production lines for the new chips, the company expects to boost manufacturing yields by roughly 30%. Based on the toggle DDR 2.0 interface, the devices support 400 MB/s data transfer rates.