EE Times Europe -- Researchers at the Ulsan National Institute of Science and Technology (UNIST) in Korea unveiled a method for the mass production of boron/nitrogen co-doped graphene nanoplatelets, which led to the fabrication of a graphene-based field-effect transistor (FET).
Led by Prof. Jong-Beom Baek, the research team uses a simple solvothermal reaction of BBr3/CCl4/N2 in the presence of potassium to mass produce boron/nitrogen co-doped graphene nanoplatelets (BCN-graphene).
A schematic representation for the formation of BCN-graphene via solvothermal reaction between carbon tetrachloride (CCl4) boron tribromide (BBr3) and nitrogen (N2) in the presence of potassium (K).
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Since graphene was experimentally discovered in 2004, various methods of making graphene-based field effect transistors (FETs) have been exploited, including doping graphene tailoring graphene-like a nanoribbon, and using boron nitride as a support. Among the methods of controlling the band-gap of graphene, doping methods show the most promise in terms of industrial scale feasibility.
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