LAS VEGAS – Samsung described its work on advanced memories for mobile systems including LPDDR4 DRAMs and a novel memory stack for wearable devices in an interview with EE Times at the International CES.
Factors driving advanced mobile memory include the need to process high-quality video, increasing expectations for compute power in low-to-mid tier phones, and the expanding Internet of Things with its plethora of sensors.
Samsung launched a 20nm LPDDR4 4GB chip late last year. The 336b chip can handle data rates up to 3,200 Mbits/s while consuming 1.1V. A 20nm LPDDR3 chip is also in production. Samsung officials did not comment on the future of mobile memory made in finer design rules.
Low power memory density is growing at a rapid rate, Samsung’s Stephen Lum told EE Times. The overall DRAM demand has skyrocketed as a result, with a 50% growth in bits.
”We expect 11 different sensors in smartphones in 2015 -- that affects both working memory, DRAM, and storage memory, eMMC,” said Lum, a mobile memory group product marketing manager. “Higher res displays are getting more data, more pixels…and you also need more bandwidth to process that,” he added.
While the LPDDR4 chip received an honorary innovation award at CES, it won’t make its way to flagship phones until later this year when Samsung partners ship devices currently in development. LPDDR3 will remain the dominant memory in mid-and-low tier devices through 2016, Lum said.
In an earlier EE Times article, Samsung said there is value in improving LPDDR3.