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IBM Demos III-V FinFETs on Silicon

CMOS Compatible Process for Advanced Nodes
6/18/2015 10:20 PM EDT
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R_Colin_Johnson
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Re: IBM Being Conservative
R_Colin_Johnson   6/21/2015 7:23:29 PM
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Faster wires are also an area of research, such as using graphene, but Intel, Samsung, TSMC and IBM are all trying to break the 5-GHz barrier to silicon transistors. Granted that is not the only barrier to faster chips, but why else would all the big semiconductor makers be spending millions on making III-V channels for next-gen transistors? Its a complicated issue--thanks for your input.

alex_m1
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Re: IBM Being Conservative
alex_m1   6/21/2015 5:45:26 PM
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@Colin: >> III-V materials are up to three times faster than silicon transistor channels

Still , in new nodes, most of the delay is due to wires - not transistors, so won't the transistor speed have limited effect?

R_Colin_Johnson
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IBM Being Conservative
R_Colin_Johnson   6/19/2015 1:39:52 PM
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This IBM scientist is being very conservative. What this means is that Moore's Law will be able to be extended beyond its current end, according to the ITRS, circa 2028, because these III-V materials are up to three times faster than silicon transistor channels, and that's without optimization. What do you think about the prospects of III-V on silicon for FET channels?

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