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Intel, Micron Launch "Bulk-Switching" ReRAM

7/28/2015 08:15 PM EDT
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Ron Neale
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Re: Job opening for 3DXPoint (tm) Strong evidence
Ron Neale   8/11/2015 4:34:57 PM
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Resistion: I have to admit that is a pretty strong vote or possible evidence that 3DXPoint (tm) might be  born again PCM. The word "characterization" might suggest that not all the old PCM problems have ben solved.  Why not say its PCM in the presentation, is the stigma that the acronym PCM carries with it so great that even Intel did not think they would be able to overcome it. I think it took two or three chip iterations to get the withdrawn 1 Gbit chip right. Is the step to 128G-bit more simple? I wonder if the next step will be the secret data sheet, as per Numonyx of yesteryear.

resistion
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Job opening for 3DXPoint
resistion   8/11/2015 9:10:31 AM
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"Micron Research & Development has an immediate need for engineers to support the development of advanced Phase Change Memory based non-volatile memory products. As a Process Integration Engineer, you will contribute to the development and characterization of a leading edge advanced Phase Change Memory technology in R&D and subsequent transfer of the process to a production Fab."

http://job-openings.monster.com/monster/fba2ad82-5251-4d95-b6cd-240bf6c362a9?mescoid=1500128001001

bkeller137
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Can't replace DRAM yet
bkeller137   8/5/2015 8:33:03 AM
My understanding is they claim it can handle 1000x more writes than Flash memory, but a simple loop that updates a memory location will kill this within 1 CPU second, so I doubt this could be used to replace DRAM ... yet. Howver, just replacing Flash and using it to continue replacing Disc storage would be tremendous. Computer boot times of less than 5 seconds should be possible without using hibernation.

resistion
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Re: disruptive
resistion   7/31/2015 9:26:40 PM
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Indeed it is disruptive. Unless it is significantly more expensive, it will cannibalize their concurrent 3D-NAND and TLC NAND. Whether it is neuromorphically capable depends on the nature of this resistive memory. Usually they are.

chip_maker
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AI/intelligent machines with compact brains?
chip_maker   7/31/2015 2:45:46 PM
I am not a material scientist. However reading about this(3D xPoint, PCM, ReRam) for last one week, it appears to me that 3D Xpoint memory (other memories like it) is a disruptive innovation relevant to applications like Big Data, Neuromorphic computing, pattern recognition(useful for speech analysis, image recognition). 128 GBit on the same die? That's 16 GBytes..awsome...Did I get it right that its 16 GBytes on same die? With this AI/intelligent machines with compact brains are possible unlike today's blobs of Super computers. We are close to Desktop Watsons looks like..


Questions to Author and Commenters:

1. Is this an inflection point towards consumer AI machines?
2. Are we going to need new instructions to exercise this memory? (for load, store, compare in memory etc)

3. What interfaces are they going to use for this memory? Any novel interfaces exist? or being designed?
4. How about adiabatic instructions?
5. Are they going to add new keywords(commands?) in OOPs like C++ for this?

Patrikb
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Re: When?
Patrikb   7/31/2015 8:38:31 AM
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Wouldn't it make most sense for Intel/Micron to pursue some highend datacenter storage applications first? My guess is that it will take some years before we see this technology going into mainstream client devices and servers.

palangga
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Power consumption?
palangga   7/30/2015 6:54:13 PM
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Curious that they don't mention power savings on a non-volatile replacement to DRAM.  I guess it depends on how much power it takes to program the cells.  But if the implementation of this memory can extend battery life of mobile devices, it will be a real game changer.

Ron Neale
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Re: 3D Xpoint candidate materials MVOs
Ron Neale   7/30/2015 12:40:03 PM
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Resition: I suppose we should add MVOs, Metal Vanadium Oxides to the list of possible candidate materials for 3DXpoint (tm). The metals (M) can be Co, Ni Cd, Zn, Li, Na and K. These compounds can be made as amorphous films that threshold switch. Although VO undergoes a resistance transition at about 70 C the additives may be able increase that to above 85 C and possible make the transition NV and revesible. Where the memory cell becomes more battery like.

nlenz
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Re: When?
nlenz   7/30/2015 9:57:17 AM
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Thanks for the information!

Peter Clarke
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Re: When?
Peter Clarke   7/30/2015 7:14:32 AM
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Intel and Micron said 3D XPoint components would sample this year to special customers and "go to market in 2016."

What that means for the memories turning up in computers is not absolutely clear.

For example, providing samples to companies in 2015 may result in redesigns of 3D XPoint memory components to provide certain application specific I/O interfaces.

 

 

 

 

 

 

 

 

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