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Intelís Krzanich: CEO Q&A at IDF

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8/21/2015 07:00 AM EDT
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resistion
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Re: Wikipedia revelation? WHY and by WHO
resistion   9/28/2015 7:46:31 AM
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I don't know who and we might guess why, but assuming we take it as it is, how did they determine it was those PCM patents? Especially the PCM material, as you also doubted.

BTW, this Intel patent application is just a little too PCM-friendly, especially PCMS: https://www.google.com/patents/US20140304475 or https://www.google.com/patents/US20140304475. But these do not mention any materials in particular.

The use of a selector is hard to go along with an MTJ or anything requiring compliance at higher voltages, including correlated electron oxide systems, e.g., http://www.kps.or.kr/home/kor/journal/library/downloadPdf.asp?articleuid=%7B262CBEAF-88E7-4991-8DBA-3437C66C16E4%7D or http://www.nature.com/articles/srep01704/figures/1. So this also tends to favor PCM.

Regarding the case for the selector, I am not sure if possibly manufacturing the ovonic threshold selector would be more economical than a p-n diode. Perhaps that led to the finding of the selector patent.

The PCM if coupled with an OTS selector, needs to have a higher Vth than the OTS, that might explain the finding of the storage material application, although it seems to have already been covered by prior art, which includes GeSbTe with different stoichiometries than 225.

 

Ron Neale
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Re: Wikipedia revelation? WHY and by WHO
Ron Neale   9/27/2015 4:57:29 AM
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Resistion: The first question, who updated the patent list and why?

There are a couple of eutectics in the Sb-Te phase diagram that have lower melting temperatures than GST. The one at 70%Te has a melting temperature of 544 C, the other at >90% Te has a melting temperature of 422C. Not sure what sort of glass or amorphous structure they have when quenched

If you accept with higher Te concentration the more complete Te bonds will be made and therefore fewer traps and that might result in a higher threshold switching voltage and a higher resistance and thinner films.   (Consider it more like a highly annealed GST material as the starting point). Also one less material to be involved in element separation, from whatever cause.  There are of course many other considerations of performance and characteristics which must be considered, especially the lack of an experience base when changes from GST or doped GST are made.

Get rid of Ge at your peril. Somewhere buried in all the other structure related conduction processe that occur, there is some indication starting to surface that at very localalised level a change in the co-ordination number of Ge may be responsible for swiching and memory.

resistion
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Re: Wikipedia revelation?
resistion   9/26/2015 8:53:49 PM
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The Wikipedia page on 3D XPoint was updated with patents allegedly covering the 3D XPoint device:

Selector: US8148707 (OTS)
Storage: US20090072218 but covered by prior arts US7233054, US20070221905, US20040113137 (PCM containing Sb and Te but not GST)

There seem to be some differences from the press announcement. I am not sure if this will be confirmed or denied by Intel or Micron.

resistion
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Re: Israel project in silence?
resistion   8/24/2015 6:40:31 PM
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Seems directly affected by 10 nm delay. Could it repeat fab 42?

geekmaster
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Re: Israel project in silence?
geekmaster   8/24/2015 1:14:02 PM
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It looks like nobody talks about the $6B project in Israel. This may happen before Fab 42. I wonder what is going on there and why this does not make news!

Gondalf
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Re: Israel project in silence?
Gondalf   8/24/2015 3:50:19 AM
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It could be a great Fab to ramp up in memories production. This is a fact Intel is agan in the memory business and they said officially they will produce the chips in house "if necessary". I believe it will be, 10000 wafers/month are not enough to ship 3D NAND and 3D X-Point chips for upcoming products and customers.

Gondalf
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Re: No admission to buying EUV
Gondalf   8/24/2015 3:41:03 AM
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Yes they have a ownership thanks to their investiments. Moreover i think that regarding EUV scanners, they will be the largest customer around by a wide margin. Remember that finer nodes will become only a portion of TSMC shipment, the bulk of the production will stay on "older" nodes for a while. About Samsung it is not a major EUV customer, their  logic division is small (half of GloFo shipment), and memory division (the largest one) do not  need of EUV scanners in upcoming years, it will be all stacking with conservative nodes "under" 40nm.

Anyway i have the suspect Intel CEO silence was a sandbagging, he doesn't deny the purchasing.

resistion
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Re: Israel project in silence?
resistion   8/23/2015 9:36:53 PM
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Rick and m00nshine, D1X mod 2 is most reasonable choice agreed BUT the power requirements have not been determined yet. I mean wall plug power. That affects the footprint. Presumably larger power larger footprint. Power is added serially: http://optics.org/news/6/6/31

m00nshine
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Re: Israel project in silence?
m00nshine   8/23/2015 9:27:45 PM
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Personally I can't imagine committing them all to one fab right away, but the D1X Mod1/Mod2 fab is the only US fab complex large enough to house them all at once In the future, the space needs won't be as large if you can put all the vhips on the table and commit to no or very limited double patterning. But in the mean time, you're talking inserting EUV into current production fabs full of all the litho/etch/films tools needed for double patterning and that's just a gamble because it's taking away a huge amount of valuable production area.. D1X is probably big enough to put in a bunch of EUV machines alongside those tools for double patterning for a full side by side evaluation plus it would have been a clean slate to work with. That seems awfully wasteful, though, even for Intel

resistion
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Re: Israel project in silence?
resistion   8/23/2015 9:26:23 PM
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Strange, what happened to Fab 42. Cancelling that was bigger /more impact than this EUV order.

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