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Flat Tunneling Transistor Operates at 0.1V

12/8/2015 11:11 AM EST
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jimfordbroadcom
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Re: Typo
jimfordbroadcom   12/9/2015 1:11:31 PM
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Just curious about MoS2.  If it is indeed compatible with Si processing, and assuming this structure doesn't have some other serious disadvantages, we could see it at the foundries sooner rather than later.  While I work for a chip design company, I don't design chips and don't know much about the processing since my job is designing and testing the boards that the chip designers use to evaluate their chips.  Thanks.

Peter Clarke
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Re: Typo
Peter Clarke   12/9/2015 1:06:13 PM
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Hi Jim

Thanks for spotting my typo...

And thanks to Susan Rambo, a hero of EE Times, for correcting it.

As to compatibility with silicon production, I am not sure.

MoS2 can be laid down fairly easily on SiO2 and I think Si but it does have some self-lubricating qualities which may be problematic in a production facilities?

Can anyone chip in?

 

 

 

 

zeeglen
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Re: Typo
zeeglen   12/8/2015 7:15:59 PM
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@ jzws  Point given and taken.  British English and American English have their differences. 

jzws
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Re: Typo
jzws   12/8/2015 6:59:12 PM
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And if we are being pedantic, let's differentiate between round/around as an adjective/adverb/noun/verb or even preposition.

So, in defence of my British compatriot, Peter had it absolutely right. When used as an adverb, in English English, we would use get round in the original context.

And in general, I'd say Americans use around in contexts in which I for one would normally prefer round.

But Susan, please don't change again. I think we all know what is meant.

Susan Rambo
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Re: Typo
Susan Rambo   12/8/2015 5:40:33 PM
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Thank you. I updated the story.

zeeglen
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Re: Typo
zeeglen   12/8/2015 3:22:55 PM
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If we are going to pick on Peter for typos, here are a couple more.  Since English is not the first language of many readers of EE Times it is important that these errors not become proliferated through re-use.

"To get round" should be "To get around".  "To get round" means to become fat.

"make it passed" should be "make it past".

Now the main points:

This is an interesting report.  Any idea of potential switching speed and drive capability?

jimfordbroadcom
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Typo
jimfordbroadcom   12/8/2015 3:05:35 PM
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Hi, Peter.


Looks like a typo in the 4th paragraph, as it reads, "...and MoSi2 as the channel".  Should be MoS2, as elsewhere in the text and figures.

Also, I have to ask whether or not MoS2 is compatible with conventional silicon processes at the foundries.

Thanks.

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