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TSMC Work on 5nm Process Leaves EUV Undecided

12/15/2015 00:00 AM EST
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double-o-nothing
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Real reason for delay
double-o-nothing   1/14/2016 8:18:56 AM
They tried to avoid EUV having to use a pellicle, but now realize they need it. Unfortunately, the EUV light heats the pellicle to hundreds of degrees, destroying it. If the heat didn't kill it, the hydrogen ambient (for keeping the mirrors clean) would eat (etch) it. They sneaked that one by the press pretty well. They should have called it "EUV immersion lithography". Not water immersion but hydrogen.

resistion
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Re: Go figure
resistion   1/12/2016 6:41:22 AM
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I just read SPIE report that even in 2018 the EUV infrastructure is not expected to be ready then, so it's not surprising to expect to extend the 7nm quad patterning to 5nm (34 nm to 24 nm pitch).

resistion
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Go figure
resistion   12/15/2015 10:07:11 AM
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EUV delayed too much already and quadruple patterning already coming up to speed for 7 nm and 5 nm.

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