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EUV Improves But Not Ready

Progress in light source, throughput cited
1/21/2016 01:55 AM EST
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NilsD
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Re: Maybe, for a little further out in time frame
NilsD   1/24/2016 3:01:12 AM
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Phase-shifting and attenuated phase shifting masks for EUVL have been demonstrated, for over 10 years now. In either case, there can be an increase in efficiency relative to a binary amplitude mask.

resistion
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Re: Maybe, for a little further out in time frame
resistion   1/22/2016 11:47:52 PM
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For arrayed beam sources, electron beams will be more compact. I think there have been various schemes proposed over the years. Mapper/TSMC comes to mind. Also IMS/DNP/Photronics/Intel for mask writers.

Les_Slater
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Re: Maybe, for a little further out in time frame
Les_Slater   1/22/2016 8:54:20 PM
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Yes, thought of that, also a smaller array that would project in blocks.

resistion
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Re: Maybe, for a little further out in time frame
resistion   1/22/2016 8:43:04 PM
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A more realistic implementation of what you propose is a single EUV beam, which already takes up space to generate. Of course the throughput would be different.

Les_Slater
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Re: Maybe, for a little further out in time frame
Les_Slater   1/22/2016 7:50:34 PM
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Even if mask absorbtion loss is minor compared to other losses it is still significant. I think another way of saying that is that it takes a significantly high ratio of light generated to light reaching the mask. But, let's say a mask has an equal ratio of opaque absorbing to transparent transmissive, half, 50% of light falling on the mask is wasted, requiring twice the power times time, energy, to expose than if a pattern of emitters were used.

resistion
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Re: Maybe, for a little further out in time frame
resistion   1/22/2016 6:53:44 PM
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An EUV maskless is attractive for avoiding mask-specific issues, particularly defects, but still the mask absorption is a small part of the total absorption, as each optical element has some absorption. Eventually beam forming still needs such absorptive reflectors. And now you have the bigger problem of having to have an array of EUV sources, whose optical columns do not interfere with one another. The EUV is generated as a plasma from tin ions multiply ionized (9+ to 13+), so the plasma EUV light also needs to be collimated. Currently, it takes big space to do that.

IJD
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Re: What will make EUV (finally) take off...
IJD   1/22/2016 10:14:13 AM
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No formula, but for sure the power consumption per machine is in the megawatt region due to the extremely low mains-to-EUV-on-the-wafer efficiency, which was somewhere below 0.01% last I heard...

rick merritt
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Re: What will make EUV (finally) take off...
rick merritt   1/22/2016 10:11:06 AM
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@IJD  Good point. You remind me to ask what the machne's power consumption is.

Calculating a final cost per die for EUV has got to be complex. Is there a forumula you can share?

 

IJD
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What will make EUV (finally) take off...
IJD   1/22/2016 9:58:42 AM
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...isn't throughput, or increased fab productivity, or ease of design, or the fact it can make 3nm (or whatever) chips -- it's cost per die. Nobody will install EUV equipment in gigafabs for the majority of high volume devices (not trials or sample production) until it's *cheaper* than multi-patterning, including the ludicrous cost of the equipment, power consumption (megawatts!), masks, pellicles, inspection, yield.

Even if it has technical advantages, it will only be a niche product until then.

Les_Slater
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Maybe, for a little further out in time frame
Les_Slater   1/22/2016 8:11:02 AM
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First question, the power we are talking about is to cover the whole wafer? Or sections thereof?

In eather case, some of that power is wasted in mask absorbtion, a significant portion of it. The only way around that would be beam forming of some sort, only targeting desired areas. A quite duanting task in itself.

It occurs to me that an EUV emitting array with sufficient resolution for applicable patterning would be an optional approach. Then use EUV optical systerm to focus on target.

The size of each 'pixel' could be such that needed power could be produced with adequate area for cooling.

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