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Globalfoundries Preps 12nm FDSOI Process

9/8/2016 10:58 AM EDT
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Violoncelles
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Re: FD-SOI
Violoncelles   9/26/2016 6:40:11 AM
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GloFo works on FDSOI 20 nm . Then there is no use to propose FDSOI 28 nm.

Violoncelles
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Re: FD-SOI
Violoncelles   9/26/2016 6:40:05 AM
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GloFo works on FDSOI 20 nm . Then there is no use to propose FDSOI 28 nm.

resistion
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Re: Not 10nm?
resistion   9/15/2016 3:05:59 AM
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Sounds very similar to Samsung's new 10nm.

Austin Tech Watcher
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Re: Not 10nm?
Austin Tech Watcher   9/13/2016 3:34:54 PM
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By stopping at 12nm they avoid triple patterning, saving masks.

michigan0
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Re: FD-SOI
michigan0   9/12/2016 11:13:00 PM
Sang Kim

28nm bulk is in mass production for several years by major semiconductor companies such as Intel, GF, ST, Samsung and others but not 28nm FD-SOI yet today. GF has not addressed yet why 28nm FD-SOI is not manufactured today. Can GF manufacture 12nm FDSOI without 28nm FDSOI manufactured? Therefore, we should look at why FD-SOI is not manufactured even at 28nm today.

First, IBM created the first international SOI consortium a decade ago and then faded away. One of the biggest issues not addressed here with 28nm FDSO tech is the hot carrier reliability. It is because unlike 28nm bulk the 28nm FD-SOI dosn't have the LDD(Lightly Doped Drain) to minimize hot carrier generation. Also, the hot carrier reliability will become worse with scaling. Therefore, unless the hot carrier issue is resolved at 28nm, 28nm FD-SOI and beyond can't be realized.

Second, what happens when hot carriers are generated near the drain for normal FD-SOI operation? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin burred SOI layer below. Some holes may become trapped at the burried thin oxide layer causing Vt shifts, resulting in device failure. Fuhermore, the vast majority of holes drifts through the un-doped SOI channel toward the N+source causes DIBL(drain Inducd Barrier Lowering), also resulting in device failure, thus, the end of the 28nm FDSOI technology.

Finally, how thin SOI thikness is required for 12nm FD-SOI? About 3nm. Depositing  such an ultrathin 3nm uniformly and reliablly over 12 inch wafers at the manufacturing line is extremely difficult or not be manufacture-able. If not manufacture-able, That is the end of 12nm FD-SOI. Therefore, FD-SOI technology is not scalable.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ldd

resistion
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Not 10nm?
resistion   9/8/2016 6:53:49 PM
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Why not name it 10nm, especially if there is no other 10nm follow-up before 7nm?

geekmaster
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12nm FDSOI in Dresden?
geekmaster   9/8/2016 5:47:28 PM
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Peter!
What do they mean when they say "nearing production"? Is this end of 2016 or 1Q17?
Also, did they say if volume production is actually in Dresden or will it be also in Malta?

 

 

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