REGISTER | LOGIN
Breaking News
Oxygen Layer May Extend Moore's Law
10/19/2016

Image 1 of 3      Next >

A cross-section image of the Mears Silicon Technology (MST) where oxygen superlattice layers in the channel of a transistor (red) increase mobility and drive current while lowering leakage.
(Source: Atomera)
A cross-section image of the Mears Silicon Technology (MST) where oxygen superlattice layers in the channel of a transistor (red) increase mobility and drive current while lowering leakage.
(Source: Atomera)

Image 1 of 3      Next >

Return to Article

View Comments: Newest First | Oldest First | Threaded View
leseratte
User Rank
Rookie
More info, please
leseratte   10/21/2016 2:12:23 AM
NO RATINGS
There is something missing from this description.  Oxygen at standard temperature and pressure is a gas.  It doesn't bond to any solid.

EagleEye2
User Rank
Rookie
Can fabs control the thickness required?
EagleEye2   10/19/2016 10:04:19 PM
NO RATINGS
Clever idea as far as transport. They must be exploiting the ability to control the sub-band structure with extremely thin thickness, thereby optimizing mobility.

But it requires extremely good control of the layer thickness. It seems it might even require control at the atomisitic level.

Can fabs actually control these thicknesses that well?

EagleEye2

Like Us on Facebook
EE Times on Twitter
EE Times Twitter Feed