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TSMC Calls for New EDA Paradigm

2/6/2017 01:45 PM EST
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resistion
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Re: Already a concern at 28nm
resistion   2/7/2017 11:46:23 PM
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Intel has it for 14nm (IEDM 2014), but it wasn't mentioned in the TSMC 7nm IEDM paper.

resistion
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Re: Already a concern at 28nm
resistion   2/7/2017 10:49:22 AM
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That's even better, and makes sense. Thanks.

IanD
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Re: Already a concern at 28nm
IanD   2/7/2017 9:34:22 AM
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The high-performance TSMC 7nm process has more options for metal/via layers (thicknesses, allowable widths/spacing/via sizes, number of layers) and standard cell heights than the mobile process.

resistion
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Re: Already a concern at 28nm
resistion   2/7/2017 7:10:24 AM
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Yes, so for the higher-performance metal at 7nm, they would not put so much weight on the 1X copper pitch, that is what I mean. Or not necessarily use the minimum specified 1x pitch, maybe 1.4-1.5x.

Violoncelles
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Re: Already a concern at 28nm
Violoncelles   2/7/2017 6:12:43 AM
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Yes , a wiring impact on the performance happened much before the FIN FET or 28 nm. This is why the most advance nodes are on copper when they used to be in aluminum. This is also why , there are different pitches on metals : 1X , 2X , 4X , 8X etc.

name99
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Re: Already a concern at 28nm
name99   2/7/2017 12:41:15 AM
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Has TSMC ever announced publicly that they're working on air-gap in their metal layers? That would seem one obvious part of the solution. 

resistion
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Already a concern at 28nm
resistion   2/6/2017 9:29:36 PM
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Even before FinFETs these concerns about wiring impact on performance has already happened. When they say they have two different metals for density or speed, I think the speed metal is equivalent to an older node, just improved with FinFETs.

https://www.semiwiki.com/forum/content/6568-timing-closure-complexity-mounts-finfet-nodes.html

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