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The resistence-switching mechanism within Crossbar's memory is based on the formation of a filament by the movement of silver ions from the top electrode within amorphous silicon. Source: Crossbar Inc.
The resistence-switching mechanism within Crossbar's memory is based on the formation of a filament by the movement of silver ions from the top electrode within amorphous silicon. Source: Crossbar Inc.

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yjdong
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Re: CBRAM? ECM or EM good question
yjdong   2/5/2014 9:00:47 PM
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Hi Ron,

Can I also get one copy of your slides?

My email: yajie.dong@gmail.com

Thanks very much,

 

Ron Neale
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Re: CBRAM? ECM or EM good question
Ron Neale   1/21/2014 5:02:54 AM
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My slide set is winging its way to you.

HongWei_li
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Re: CBRAM? ECM or EM good question
HongWei_li   1/21/2014 1:16:15 AM
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Ron, could you please send me a copy of the your slides for crossbar? my email: jerry_lihw@sina.com  Thanks

resistion
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Avoiding the key question
resistion   10/23/2013 7:57:30 AM
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So it all boils down to the key question: how does this Ag-aSi system conduct vs. temperature? Is there a Schottky fit? Is there an activation energy? Could there be a crystallization temperature involved?

Ron Neale
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Re: CBRAM? ECM or EM good question
Ron Neale   10/23/2013 7:04:49 AM
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 Yjdong:-Looking at other metals and Shottky formation, I suppose the question is how much is the original amorphous silicon structure disturbed by the movement of metal into and out of that structure, the ideal situation would be not at all. My view is that would only occur if the movement was electro-migration/current density/diffusion driven, candidates Ag, Cu and even Gold.

In which case the metal poly/single crystal contact would most likely be considered a Shottky. I would suggest that trying to detect how much the amorphous structure has changed would be the basis of the analytical technique.

As one moves away from that ideal situation the alloying of the metal with the amorphous silicon has to be considered. In the extreme case that would be say a VIA formed using a refractory metal and a-Si where say an irreversible W-Si alloy link is formed. In the intermediate case if in its molten state the Si-X alloy can form an electrochemical cell that would provide the needed reversibility for an NV memory. In all three cases the threshold switching effect displayed by a-SI provides the means for localizing the current and raising the temperature. 

yjdong
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Re: CBRAM? ECM or EM good question
yjdong   10/22/2013 10:07:38 PM
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To Ron Neale,

I agree that the most possible choice of the non-linear element location is the contact between silver filament tip and the polysilicon, but not sure whether it is a Shottky or not.

Just for your information, a good theory has to be able to explain the observed metal differences.

Some examples of other metal/a-Si/c-Si switching behavior can be found in fig12 of patent publication #:US20110001117 A1
http://www.google.com/patents/US20110001117?cl=en

Metal dependence was also observed in previous work on metal/a-Si/metal switches (like summarized in this reference: Owen, A. E. et al. Int. J. Electron. 1992, 73, 897.)
It was this paper, also your classical 1970 paper, that made me realize the origin of the switching could be the amorphous semiconductor and motivated me to try different metals, which led to the discovery of the Ag/a-Si/c-Si switch in Nanowires.

To RhyandEE,

The work at Harvard was based on bottom up nanowires, while UMichigan work by my previous colleague was to apply this discovery to CMOS compatible planar structures, which wasn't of interest to my advisor at that time.

As to why other metals didn't work as well, the diffusivity difference could be one reason. HRTEM observation of the switching process might provide the ultimate experimental explanations of the metal difference. Which I believe Umich are still working on. But there might be some technical difficulty in observing Ag/a-Si/c-Si structures in TEM and the video they presented on Crossbar website may not be clear enough yet. 

PhyandEE
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Re: CBRAM? ECM or EM good question
PhyandEE   10/17/2013 12:13:26 AM
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-yjdong-

You said you tried other metals. Why they did not work? Is it because they do not have a good diffusion capability as silver?

PhyandEE
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Re: CBRAM? ECM or EM good question
PhyandEE   10/16/2013 11:56:48 PM
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Do you think what is the difference between your work at Harvard and the work at U Michigan?

 

Ron Neale
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Re: CBRAM? ECM or EM good question
Ron Neale   10/15/2013 6:36:40 PM
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yjdong: Yes other fast diffusing elements or alloys may be possible and certainly should be tried (Cu or as you suggest an alloy, e.g. CuAg ?). For the paper I was preparing I was going to suggest three locations for the diode or non-lnear element. The first choice is the contact between the tip of the silver column and the poly silicon, forming a Shottky. If in that case the actual growth and removal of the bridge occurs at its centre away from both electrodes, it would mean the the diode and the contact between the silver and the column remain fixed once "formed" If a diode in that location must be formed and remade for each write/erase event that adds another variable to my concerns about the contact between the Ag electrode and the silver column or dendrites

If you are prepared to accept that the bridge leaves a small tunneling gap at its tip and then I suppose there is just the possibility that a diode could be formed  between all the interfaces between the Ag and the polysilicon or at the polySi-to-aSi interface.  I think the diagram the accompanies this article does not attempt to account from where the ions shown floating in the a-Si have come.  If you contact me through EETimes your certainly welcome to my diagrams/figures. Is silver essential don't know.

yjdong
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Re: CBRAM? ECM or EM good question
yjdong   10/15/2013 4:07:03 PM
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The reason Ag was selected is: it is the only metal that showed rectified switching behavior in the metal/a-Si/c-Si structures that I tried.

The origin of crossbar switch can be tracked back to this paper.

http://cmliris.harvard.edu/assets/NanoLett_8_386.pdf

Besides the fast diffusion issue as you discussed, the poor thermal and chemical stability of Ag could also be problems when scaling down and stacking up 3D crossbar arrays.

I thought some Ag based alloys (with better stability) could be one way to overcome these problems while maintaining the rectified switching performance.

Hope Crossbar could give them a try.

 

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