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FETs Design: Br/N-Based Dopants Open Band-Gap in Graphene Nanoplatelets
12/20/2013

A schematic representation for the formation of BCN-graphene via solvothermal reaction between carbon tetrachloride (CCl4) boron tribromide (BBr3) and nitrogen (N2) in the presence of potassium (K).

Visit the Ulsan National Institute of Science and Technology at www.unist.ac.kr.
A schematic representation for the formation of BCN-graphene via solvothermal reaction between carbon tetrachloride (CCl4) boron tribromide (BBr3) and nitrogen (N2) in the presence of potassium (K).

Visit the Ulsan National Institute of Science and Technology at www.unist.ac.kr.

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wilber_xbox
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advantage with other FETs
wilber_xbox   12/28/2013 9:38:33 AM
NO RATINGS
What makes these FETs useful than the planer or 2D FETs.

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