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Intel's FinFETs approach draws fire from rivals

Fur flies over FinFETs
12/13/2012 04:45 PM EST
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rick merritt
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re: Intel's FinFETs approach draws fire from rivals
rick merritt   12/13/2012 7:52:19 PM
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Are you backing FinFETs? FD-SOI? Gemanium? Tunnel FETs? and why?

song-chou-1
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re: Intel's FinFETs approach draws fire from rivals
song-chou-1   12/13/2012 9:58:42 PM
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Rick 3 big customers have committed to making foundry planar 20nm next volume node versus pick 20nm finFET (called "14 or 16nm") Rest still deciding. There is no meaningful data anywhere on foundry Finfet so perhaps they have the same problem as Intel.

the_floating_ gate
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re: Intel's FinFETs approach draws fire from rivals
the_floating_ gate   12/14/2012 2:07:31 AM
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IBM's left hand does not seem to know what the right hand is doing - the foundry manufacturing landscape appears in complete disarry - poor UMC "sucker" - no wait UMC figured out long before IBM that SiLK though it looked great on paper could be manufactured... UMC licenses IBM technology for 20-nm FinFETs www.eetimes.com News and Analysis Jun 29, 2012 (UMC) has licensed technology from IBM Corp. to expedite the development of its 20-nm CMOS process, including FinFET 3-D transistors, the ...

the_floating_ gate
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re: Intel's FinFETs approach draws fire from rivals
the_floating_ gate   12/14/2012 2:08:31 AM
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could NOT be manufactured

giriscitek
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re: Intel's FinFETs approach draws fire from rivals
giriscitek   12/14/2012 3:32:42 AM
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I want to go with FD-SOI because when the substrate is fully depleted meaning no doping(theoretically) and hence the substrate will have very high resistance. This means that the drain and source of MOS transistors can be very close as ST-Micro suggested less than 10nm (8 , 5 , ..) and still gate will have good control over the drain current which is crucial for MOS transitors to work properly. FD-SOI will not be completely new step like Intel's 3D stacked MOS transistor architecture. Hence FD-SOI will be more cost effective in terms of material cost of MOS transistor manufacture. Digital MOS : FD-SOI , 3D or carbon wires will be good. Analog MOS : ????? (for less than 10nm) Carbon wires will be a boon for digital chips of the future with more than 10 billion switches on chip. may be good for memory as well like processor caches and SRAM kind.

the_floating_ gate
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re: Intel's FinFETs approach draws fire from rivals
the_floating_ gate   12/14/2012 4:00:18 AM
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Are you backing FinFETs? FD-SOI? Gemanium? Tunnel FETs? and why? Why is AMD abandon SOI after using it for years? AMD will therefore move on from SOI based processes next year. Kaveri that will replace Trinity will be made with 28 nanometer technology, which CTO (Chief Technology Office) Mark Papermaster confirms will be Bulk-based. The same year the cheap and energy efficient platforms Kabini and Temash will arrive, which will build on a similar 28 nanometer technology. There were not details on who will supply the process, but most likely Kaveri will be made by GlobalFoundries, while TSMC will produce Temash and Kabini.

HS_SemiPro
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re: Intel's FinFETs approach draws fire from rivals
HS_SemiPro   12/14/2012 6:46:57 AM
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Was there any paper from TSMC at IEDM talking about their Roadmap or showing that they have made progress with FinFet?

HS_SemiPro
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re: Intel's FinFETs approach draws fire from rivals
HS_SemiPro   12/14/2012 6:50:09 AM
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IBM will likely go to FinFet at 14nm. But IBM doesn't need to compete in Consumer Electronics market, their technology is optimized for Enterprise High Performance Servers, SO they can afford SOI

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