Breaking News
News & Analysis

Sharp, dulled by losses, running out of options

Sharp-Hon Hai deal?
11/1/2012 05:15 PM EDT
12 comments
NO RATINGS
< Previous Page 2 / 2
More Related Links
View Comments: Newest First | Oldest First | Threaded View
<<   <   Page 2 / 2
junko.yoshida
User Rank
Author
re: Sharp, dulled by losses, running out of options
junko.yoshida   11/1/2012 5:50:08 PM
NO RATINGS
It is due to a number of write-offs the company had to make. In the first half of the current fiscal year alone (April to September, 2012), Sharp said it made a net loss of 387.5 billion yen as a result of rising restructuring costs and falling demand for LCD televisions. It booked 84.4 billion yen of extraordinary charges as it wrote off the value of surplus display inventory and pulled out of solar panel manufacturing. It also wrote off 61 billion yen of so-called deferred tax assets – corporate-tax credits it could redeem if it returned to profit. But that's a prospect that doesn't look good for now.

krisi
User Rank
Author
re: Sharp, dulled by losses, running out of options
krisi   11/1/2012 5:30:19 PM
NO RATINGS
Revenue drops only 4% but the losses grew to $3B a quarter???

<<   <   Page 2 / 2
Most Recent Comments
michigan0
 
SteveHarris0
 
realjjj
 
SteveHarris0
 
SteveHarris0
 
VicVat
 
Les_Slater
 
SSDWEM
 
witeken
Most Recent Messages
9/25/2016
4:48:30 PM
michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
Like Us on Facebook
EE Times on Twitter
EE Times Twitter Feed