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7|31|2015 TAIPEI — MediaTek has pared its expectations for 2015 as a result of weaker demand for smartphones and stronger price competition for the handset chips ...

7|30|2015 MADISON, Wis. — Samsung Electronics, once the dominant force leading growth in the global mobile market, announced muted second quarter results on ...

7|30|2015 NEW YORK — NXP Semiconductors' financial results for the second quarter of 2015 (announced July 30), highlighted $1.506 billion in revenue, a 12% ...

7|30|2015 PORTLAND, Ore. — A new sensor hub named after the Greek Goddess for the new dawn — Eos — packs a half-dozen hardware accelerators including its ...

7|29|2015 Richardson, Tex.—Programming FPGAs during prototype bring-up is often made more difficult because hardware may be ready for testing before ...

7|29|2015 TAIPEI — United Microelectronics Corp. (UMC), the world’s second-largest foundry, said its ramp of 28nm process technology will slow as the outlook ...

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A laptopís 65-watt adapter can be made 6 times smaller and ...
An industry network should have device and data security at ...
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michigan0
Re: Globalfoundries Laounches Own FDSOI Processes: Sang Kim First, according to my "device physics" your baseline device that has a gate length(channel length) of 24nm requires channel thickness of 6nm, not 7nm in order to avoid punch-through. The channel length is determined by source to drain length, not by the spacer to spacer length unless the spacer to spacer is is the same as the source to drain length, but it is not likely.  At what tech nodes they(?) use "shallow but relatively heavily doped S/D extension"? The next node to 28nm bulk is 22nm bulk. The 22nm bulk was not manufactured because unable to suppress leakage currents at the bulk 22nm node due to short channel effects. Therefore, the 28nm bulk wasn't scalable to 22nm, thus ended at the 28nm node. That is why Intel developed and manufactured FinFET at 22nm to suppress leakage currents. The FinFET on-currents come from the very long periphery region. Therefore, LDD is unnecessary at any node. The beauty of FinFET is that as long as fin width at the bottom of the fin is equal to or smaller than the gate length, Lg or channel length, the leakage currents are suppressed. That is why Intel 14nm FinFETs are volume manufactured over two years and TSMC 16nm FinFET will be manufactured in 2016 or next year but no bulk at any node yet except at 28nm node.It...
michigan0 on Globalfoundries Launches Own FDSOI Processes
Opinion
I recently wrote about the aging of EDA and the apparent lack of young talent moving into the field. My (perhaps unjustified) optimism tells me this problem will ...
Intel and Micron chose not to reveal the materials they are using or the switching mechanism at play in their 3D XPoint non-volatile memory launched earlier this week. But ...
We asked readers of Part I to guess the cost of a prototype run of 28 nm chips, as Agile development relies on a sequence of interim prototypes versus the One Big Tapeout ...
By 2016, it's estimated that one in three people will own a smartphone. There is an ever-increasing demand for smaller, more power-efficient connected devices that is ...
Up in the sky there are hundreds of satellites; in fact, there are currently an estimated 3600 satellites orbiting the earth. There are many usages for satellites, ...
Securing intellectual property (IP) and confidential product data is quickly becoming a challenge for many organizations, particularly those in the electronics ...
SK Hynix, the Korean memory chip manufacturer, announced its high bandwidth memory (HBM) product in early 2014, claiming it to be the world’s first 8Gb module made ...
In recent weeks, much attention has been devoted to silicon-germanium (SiGe) heterojunction technology as the next step in building silicon-based ICs down below 10 ...
Radio
NEXT UPCOMING BROADCAST
In conjunction with unveiling of EE Timesí Silicon 60 list, journalist & Silicon 60 researcher Peter Clarke hosts a conversation on startups in the electronics industry. One of Silicon Valley's great contributions to the world has been the demonstration of how the application of entrepreneurship and venture capital to electronics and semiconductor hardware can create wealth with developments in semiconductors, displays, design automation, MEMS and across the breadth of hardware developments. But in recent years concerns have been raised that traditional venture capital has turned its back on hardware-related startups in favor of software and Internet applications and services. Panelists from incubators join Peter Clarke in debate.
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