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ASIC TechnologyManaging Power in a Million-Gate IC DesignPart of the solution to managing power is to address the power supply connections.by Don Hanson & Teng-Sheng Moh
Managing power in a million-gate IC design presents a challenge that has several acceptable solutions. HAL Computer Systems addresses the problem by using solder-bump technology and several internally developed and commercially available analysis tools. After working through the process of power management and analysis, we're convinced it's an integral part of today's and tomorrow's large-chip designs. Signal integrity issues arise as a result of limited wiring real estate. There are three key areas of concern regarding power-related signal integrity: voltage (IR drop), ground bounce, and poor reliability caused by electromigration. Any of these can wreak havoc in a large chip, but combined, they're deadly. IR drop If the V dd and ground network is too resistive, or if the current on the power and ground lines is too high, then IR drops will develop within these networks. Consequently, the voltage of the V dd node falls and the voltage on the ground node rises, decreasing the supply voltage at the circuit. This voltage drop has an adverse effect on the noise immunity of those circuits. In extreme cases, the circuits may stop functioning correctly. When the spikes occur, the voltage collapse between V dd and ground is even more pronounced. The problem is to design the V dd and ground delivery networks with small IR drops, leaving enough voltage across the devices to keep them reliably functional. Ground bounce At the same time the designer struggles to control the power distribution network's voltage drop, ground bounce--another effect of device interactions--causes device errors. There is a subtle difference between IR drop and rise and ground bounce: IR drops and rises occur in the chip's active circuits, whereas ground bounce occurs in the quiescent part of the circuit. For a synchronous design, when the clock switches, many of the chip's circuits switch. It's not a uniform power draw; instead, it's centered around the active circuitry, which sometimes is as little as 35 percent of all the chip's circuitry. When the spikes occur, a shock wave of current goes into the ground plane. It is like throwing a big rock into a pond--the concentric wave spreads outward from the centers of the active circuits, disturbing the ground level of the gates it passes. Sometimes the ground level is elevated enough to cause false triggering on the quiescent logic gates. One way to minimize ground bounce is to limit the slew rate of all the chip's internal gates. However, there is an adverse effect of increasing the commutating current, which, in turn, increases the chip's heat dissipation. In this situation, the designer must make a design tradeoff--he or she must find a balance between reducing the ground bounce peak height and increasing the total power dissipation. Electromigration The other big issue is the effect on long-term reliability caused by electromigration. In normal signal wires inside huge chips, the current can go in either direction. The average current flow is near zero, so the atoms don't move much. However, in the power and ground supply structure, the average DC current is not zero, so the atoms' movement is unidirectional. Moreover, if the current gets high enough, one pulse will scatter the atoms and open the wire.
Figure 1. The PWRCHK flowchart for the design shows how the tools and files are related.On a large chip that has multiple layers of metal, connections are made between the layers through a contact cut, or via. These are holes intentionally made in the insulator between layers that allow the upper layer's metal to "leak" through and touch the metal of the next layer. The contact area is small, resulting in a measurable resistance and a redistribution of current flow through it. Generally, in terms of design features, a contact can carry less current than a wire. Therefore, electromigration limits are reached first at contacts, rather than in the wires or at turns in the wires. Enlarging the current path through contacts, either by using larger contact cuts or by using more of them at connection points, can solve this problem. Electromigration is temperature-sensitive. As the temperature rises, the thermal energy and electrical field combine to increase the metal mobility. This effect reduces the amount of current the wire can safely carry. To decide how wide to make the wires so that the chip will last several years, the designer must determine how hot the chip will get. Power analysis To some extent, HAL's power analysis process was invented out of necessity. Very little software is available to analyze power distribution structures. And until now, large chips didn't exist, so the tools required to analyze their power distribution weren't available. Because HAL is not in the software development business, we would have preferred to purchase the tools we needed (see Figure 1). Unfortunately, none of the tools available on the market at that time met our requirements. The analysis of power distribution is most important in a finished chip. But we also use it to analyze pieces of the chip, for macros or special big cells. The power network is extracted from the mask information to get an overall picture of the power distribution. Some tools have to extract it piecemeal, then put it back together, because of the chip's size. The process of assembly and disassembly, however, is a function that HAL's internally developed tools perform. A new tool, PGR Editor--from Silicon Valley Research--works well for full-chip extraction. Our designers generate three maps to assist in the power analysis. First, we feed the chip layout's GDSII into CheckMate, from Mentor Graphics, and extract a resistor network picture from the layout of the power distribution networks (see Figure 2). Second, we model each cell in the library with an abstract map of how its power current is drawn. We use output from Silicon Valley Research's GARDS tool to tell us where all the cells are placed. Combining these cells, we build a map of power consumption for the chip. Third, we make the map of the solder bumps to determine where power is supplied. The result of these three pictures--the resistor mesh, the power supply, and the power consumption--is a mathematical matrix of many equations, which is conceptually straightforward but not trivial to solve. Our proprietary matrix solver tool provides information about the current flowing. The power consumption maps are associated with library cells. A default mechanism creates an adequate map for most of the small, simple cells. Each one is rated by the amount of power it consumes. This power is distributed evenly to the devices in the cell. Because our extraction includes the connections to those devices, the resistor mesh accurately identifies locations on the chip where the power goes. We take the cell's total power from the library and distribute it uniformly over its points of load from the extraction.
Figure 2. CheckMate is used to extract a resistor mesh from the actual
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