Defect issues seen in 193-nm immersion

SAN JOSE, Calif. — Before 193-nm immersion lithography moves into chip production in 2007 or so, the industry must address and resolve the nagging defect issues with the technology, according to an expert at Belgian research organization IMEC.

In recent tests, IMEC has identified some 30 immersion-specific defects per wafer via 193-nm immersion lithography, said Kurt Ronse, director of the lithography department at IMEC, in a presentation at the SPIE Microlithography conference here on Monday (Feb. 20).

IMEC is grappling with several issues, including microbridges, water marks, drying stains, among others, he said.

Still, the research organization is making “spectacular progress” in solving these defect issues, he said. “These defect mechanisms have been better and better understood,” he said.

Many vendors claim 193-nm immersion lithography will move into production at the 45-nm node in the 2007 time frame.