News & Analysis
Applied Materials enters atomic layer deposition market
7/22/2002 7:01 AM EDT
SANTA CLARA, Calif. -- Applied Materials Inc. here today entered the atomic layer deposition (ALD) market, announcing a tool that enables new and advanced films for chip designs at the 65-nm (0.065-micron) node and beyond.
Applied is taking an integrated approach to the emerging market. The company's tool, dubbed the Endura iCuB/S Integrated Cu Barrier/Seed system, is an integrated ALD and physical-layer deposition (PVD) system for 300-mm fab applications.
The tool is based on its Endura XP mainframe tool line. The platform includes two 4-axis, dual-blade robots, which cut wafer transfer times by 50%, according to the Santa Clara-based company.
The system supports several new and advanced technologies, including ALD. ALD technology, which deposits a single atomic layer at a time, enables ultra-thin layers at the 65-nm node and beyond. Applied's also tool enables copper-based chip designs, with tantalum nitride (TaN) barrier layers that are compatible with advanced low-k dielectric films.
"The Endura iCuB/S system extends our comprehensive line of copper metallization solutions beyond the 90-nm generation," said Fusen Chen, vice president and general manager of the Copper, PVD and Integrated Systems Business Group at the Santa Clara-based company, in a statement.
The TaN chamber within the iCuB/S deposits an ultra-thin barrier layer with 100% side and bottom coverage. In addition, the ALD TaN film enables an "effective barrier" for integration with advanced low-k dielectrics.
The chamber also features the company's new "SIP EnCoRe copper seed process," which offers low-cost operation using a flat copper target. The SIP EnCoRe copper chamber employs a self-ionized plasma to achieve sidewall coverage, uniformity and particle control required for void-free fill with electrochemical plating.
