Infineon IGBTs exploit new thin-wafer process

Infineon IGBTs exploit new thin-wafer process
MUNICH — Using a new "thin wafer process" technology that it said offers superior electrical quality and cost advantages, Infineon Technologies AG (formerly Siemens Microelectronics Inc.) has extended its Fast IGBT (insulated gate bipolar transistor) product line. The devices come in 1,200-volt versions and Duo-Packs (IGBTs with anti-parallel diode) for 600- and 1,200 V.

To achieve a breakdown voltage of 600 V, the wafer thickness has to be about 100 microns. Up till now, this has required an expensive epitaxial set-up on a thicker substrate-wafer. Infineon's Thin Wafer Process technology produces 100-micron wafers without the epitaxial process steps. The 600-V Fast IGBTs are for currents from 2 to 30 amperes, and 1,200-V versions from 2 to 25 A.

The devices are available in SMD packages (DPAK, D2PAK) and in packages for through-hole circuit board mounting (IPAK, TO-220, TO-247). Applications like converters for electric motors normally use IGBTs in combination with diodes. Infineon's Duo-Packs integrate a Fast IGBT and an anti-parallel EmCon (emitter-controlled) Diode in one small package.

The Duo-Packs are available in SMD packages (DPAK and D2PAK) and plug-in packages (TO-220, TO-247). These devices are suitable for motor drives in washing machines, refrigerators, climate controls, pumps, and low-power industrial tooling. Other target applications are high-frequency transformers for electric welding equipment, uninterruptible power supplies, as well as switch mode power supplies and high-voltage converters for microwave and medical equipment.