Toshiba, SanDisk start NAND fab construction

SAN JOSE, Calif. -- Japan's Toshiba Corp. has started the construction of a NAND flash memory fab, dubbed Fab 5, based at its Yokkaichi Operations.

Toshiba and SanDisk Corp. are the joint partners in the NAND fab, which has been expected. Construction of the new fab reflects  expectations for increasing demand for NAND flash memory for existing and emerging applications. The initial manufacturing process will be the leading-edge 20-nm generation, with subsequent generations to follow.

Construction work is scheduled for completion in the spring of 2011.

The fab building will be constructed in two phases, with the pace of investment reflecting market trends. The partners have flexibility as to the extent and timing of their respective fab capacity ramps, and the output allocation will be in accordance with the proportionate level of equipment funding.

Yokkaichi Operations currently has four NAND flash memory fabs. Toshiba and SanDisk are currently ramping into the unused clean room space in Fab 4, and expect to reach full capacity of Fab 4 by the start of production in Fab 5.