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double-o-nothing
Samsung ready for quadruple patterning for sub-20 nm.
Hynix ramps 26-nm NAND chips
Mark Lapedus
8/10/2010 1:15 PM EDT
SAN JOSE, Calif. - South Korea's Hynix Semiconductor Inc. said that it has begun mass producing 64-gigabit NAND flash chips using 20-nm class technology at its 300-mm fab, dubbed M11.
The company developed this previously-announced technology last February. Hynix’s 20-nm class 64-Gb chip doubles the density in a package over the current 32-Gb product.
Hynix' device is said to be a 26-nm part, analysts said. Others are also ramping 20-nm class products. Samsung is ramping a 27-nm NAND device, IM Flash is shipping a 25-nm device, and SanDisk/Toshiba have talked about a 24-nm product.
The company developed this previously-announced technology last February. Hynix’s 20-nm class 64-Gb chip doubles the density in a package over the current 32-Gb product.
Hynix' device is said to be a 26-nm part, analysts said. Others are also ramping 20-nm class products. Samsung is ramping a 27-nm NAND device, IM Flash is shipping a 25-nm device, and SanDisk/Toshiba have talked about a 24-nm product.
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double-o-nothing
9/17/2010 11:33 PM EDT
Samsung ready for quadruple patterning for sub-20 nm.
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