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Intel, Micron sampling 3-bit-per-cell NAND
8/17/2010 1:43 PM EDT
SAN FRANCISCO—Intel Corp. and Micron Technology Inc. said Tuesday (Aug. 17) the companies have begun sampling 3-bit-per-cell NAND flash memory implemented in 25-nm process technology by their joint venture, IM Flash Technologies LLC.
Intel (Santa Clara, Calif.) and Micron (Boise, Idaho) said they expect to begin mass production of the 3-bit-per-cell devices by the end of the year.
The new 64-gigabit (GB) 3-bit-per-cell memory device offers improved cost efficiencies and higher storage capacity for the competitive USB, Secure Digital flash card and consumer electronics markets, the companies said. The device is more than 20 percent smaller than the same capacity of Intel and Micron’s 25-nm multi-level cell NAND, which Intel and Micron claim is currently the smallest single 8-gigabyte device in production today.
Designed IM Flash, the 64-Gb device stores three bits of information per cell, rather than the traditional one bit (single-level cell) or two bits (multi-level cell), the companies said.
Intel (Santa Clara, Calif.) and Micron (Boise, Idaho) said they expect to begin mass production of the 3-bit-per-cell devices by the end of the year.
The new 64-gigabit (GB) 3-bit-per-cell memory device offers improved cost efficiencies and higher storage capacity for the competitive USB, Secure Digital flash card and consumer electronics markets, the companies said. The device is more than 20 percent smaller than the same capacity of Intel and Micron’s 25-nm multi-level cell NAND, which Intel and Micron claim is currently the smallest single 8-gigabyte device in production today.
Designed IM Flash, the 64-Gb device stores three bits of information per cell, rather than the traditional one bit (single-level cell) or two bits (multi-level cell), the companies said.
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