Cree devises 150-mm SiC wafers

SAN JOSE, Calif. - LED component and lighting specialist Cree Inc. claims that it has achieved a breakthrough in the development and commercialization of silicon carbide (SiC) technology with the demonstration of 150-mm SiC substrates with micropipe densities of less than 10/cm2.

The current Cree technology for SiC substrates is 100-mm diameter material. SiC is a semiconductor material used in the production of a broad range of lighting, power and communication components, including light-emitting diodes (LEDs), power switching devices and RF power transistors.

The size advancement of single crystal SiC substrates to 150-mm can enable cost reduction and increased throughput, said Vijay Balakrishna, Cree's product line manager.

Cree recently announced record revenue of $264.6 million for its fourth quarter of fiscal 2010, ended June 27, 2010. This represents a 79 percent increase compared to revenue of $148.1 million reported for the fourth fiscal quarter last year and a 13 percent increase compared to the third quarter of fiscal 2010.

GAAP net income for the fourth quarter increased 445 percent year-over-year to $52.8 million, or $0.48 per diluted share, compared to GAAP net income of $9.7 million, or $0.11 per diluted share, for the fourth quarter of fiscal 2009.

For fiscal year 2010, Cree reported revenue of $867.3 million, which represents a 53 percent increase compared to revenue of $567.3 million for fiscal 2009. GAAP net income increased 402% to $152.3 million, or $1.45 per diluted share, compared to $30.3 million, or $0.34 per diluted share for fiscal 2009.


For its first quarter of fiscal 2011 ending September 26, 2010, Cree targets revenue in a range of $270 million to $280 million with GAAP net income of $52 million to $56 million, or $0.48 to $0.51 per diluted share.